March,
2003
Wide Bandgap
Semiconductor Research
Dr. John Crofton, Associate Professor of Physics and Engineering, has been working on electrical contacts to wide bandgap semiconductors for most of his professional life. While completing his Ph.D. at Auburn, a consortium of researchers at NASA, Westinghouse Electric, and Auburn began a collaborative project on silicon carbide (SiC) for the purpose of developing high power high temperature electronics suitable for space and other harsh environment applications. Crofton worked on the electrical contacts which were crucial for getting power into and out of the semiconductor device. Later while at Westinghouse Electric, Crofton worked on the contacts in the transistors used in the first commercial transmission of a high definition television signal. The applications of this material (SiC) include both commercial and military as well as space and terrestrial applications.
Crofton is currently working on several collaborative projects including a project with Dr. David Canning in the Biology Department to selectively grow neurons on a Si chip. The Si has channels or trenches etched in the surface using a photolithographic and reactive ion etch process.
When Crofton is not working at MSU, he enjoys spending time with his 7 year old son Max and his wife Judy. Crofton also enjoys flying, coaching soccer, volunteering at Murray Elementary School, and getting involved in local politics and charitable organizations.
